dhg 40 c 1200 hb preliminary ns sonic fast recovery diode symbol definition r a t i n g s features / advantages: typ. max. i fsm i r a v 150 i a v f 2.24 r 0.90 k/w v r = 2 1 3 min. 20 t = 10 ms applications: v rrm v 1200 25 t vj vc = t vj c =ma 0.4 package: part number v r = t vj =c i f =a v t c = 95c d = p tot 140 w t c c = t vj 150 c -55 v i rrm = = 1200 20 20 t vj = 45c dhg 40 c 1200 hb v a 1200 v 1200 25 25 25 max. repetitive reverse voltage reverse current forward voltage virtual junction temperature total power dissipation max. forward surge current conditions unit 2.89 t vj c =25 c j j unction capacitance v = v; t 125 v f0 v 1.29 t vj = 150c r f 43 f = 1 mhz = c 25 m ? v 2.24 t vj =c i f =a v 20 3.15 i f =a 40 i f =a 40 2x threshold voltage slope resistance for power loss calculation only backside: cathode 15 a t vj =c reverse recovery time a 20 200 350 ns (50 hz), sine t rr = 200 ns housing: high performance fast recovery diode low loss and soft recovery common cathode to-247 r industry standard outline r epoxy meets ul 94v-0 r rohs compliant r vj i rm max. reverse recovery current i f =a; 20 25 t= 125c vj -di f =a/s 400 /dt t rr v r =v 600 t vj =c 25 t= 125c vj a 8 600 pf thermal resistance junction to case thjc rectangular 0.5 planar passivated chips very low leakage current very short recovery time improved thermal behaviour very low irm-values very soft recovery behaviour avalanche voltage rated for reliable operation soft reverse recovery for low emi/rfi low irm reduces: - power dissipation within the diode - turn-on loss in the commutatin g switch antiparallel diode for high frequency switching devices antisaturation diode snubber diode free wheeling diode rectifiers in switch mode power supplies (smps) uninterruptible power supplies (ups) fav average forward current fav 125 ixys reserves the right to change limits, conditions and dimensions. ? 20110808a data according to iec 60747and per diode unless otherwise specified 2011 ixys all rights reserved
dhg 40 c 1200 hb preliminary i rms a per terminal 70 r thch k/w 0.25 m d nm 1.2 mounting torque 0.8 t stg c 150 storage temperature -55 weight g 6 symbol definition ratings typ. max. min. conditions rms current thermal resistance case to heatsink unit f c n 120 mounting force with clip 20 ordering delivery mode quantity code no. standard ordering number dhg 40 c 1200 hb 505138 tube 30 000000 yywwz logo marking on product datecode assembly code abcdef product marking assembly line d h g 40 c 1200 hb part number diode sonic fast recovery diode extreme fast common cathode to-247ad (3) = = = 1 ) marking on product DHG40C1200HB current rating [a] reverse voltage [v] = = = = 1) i rms is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2) . in case of (1) and a common cathode/anode configu ration with a non-isolated backside, the current capability can be increased by connecting the backside. ixys reserves the right to change limits, conditions and dimensions. ? 20110808a data according to iec 60747and per diode unless otherwise specified 2011 ixys all rights reserved
dhg 40 c 1200 hb preliminary s ? p ? p1 d2 d1 e1 4 123 l l1 2x b2 3x b b4 2x e 2x e2 d e q a a2 a1 c sym. inches millimeter min. max. min. max. a 0.185 0.209 4.70 5.30 a1 0.087 0.102 2.21 2.59 a2 0.059 0.098 1.50 2.49 d 0.819 0.845 20.79 21.45 e 0.610 0.640 15.48 16.24 e2 0.170 0.216 4.31 5.48 e 0.215 bsc 5.46 bsc l 0.780 0.800 19.80 20.30 l1 - 0.177 - 4.49 ? p 0.140 0.144 3.55 3.65 q 0.212 0.244 5.38 6.19 s 0.242 bsc 6.14 bsc b 0.039 0.055 0.99 1.40 b2 0.065 0.094 1.65 2.39 b4 0.102 0.135 2.59 3.43 c 0.015 0.035 0.38 0.89 d1 0.515 - 13.07 - d2 0.020 0.053 0.51 1.35 e1 0.530 - 13.45 - ? p1 - 0.29 - 7.39 outlines to-247 ixys reserves the right to change limits, conditions and dimensions. ? 20110808a data according to iec 60747and per diode unless otherwise specified 2011 ixys all rights reserved
dhg 40 c 1200 hb preliminary 200 300 400 500 600 700 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 10 20 30 40 q rr [c] i f [a] v f [v] di f /dt [a/s] t vj =125c t vj = 25c t vj =125c v r = 600 v 10 a 20 a 40 a fig. 1 typ. forward current versus v f fig. 2 typ. reverse recov.charge q rr vs. di/dt 200 300 400 500 600 700 0 5 10 15 20 25 30 35 i rm [a] di f /dt [a/s] t vj = 125c v r =600v 10 a 20 a 40 a fig. 3 typ. peak reverse current i rm vs. di/dt 200 300 400 500 600 700 0 100 200 300 400 500 600 700 t rr [ns] di f /dt [a/s] 10 a 20 a 40 a t vj = 125c v r =600 v fig. 4 typ. recovery time t rr versus di/dt fig. 5 typ. recovery energy e rec versus di/dt 200 300 400 500 600 700 0.2 0.4 0.6 0.8 1.0 1.2 1.4 e rec [mj] di f /dt [a/s] t vj =125c v r = 600 v 10 a 20 a 40 a 0.001 0.01 0.1 1 10 0.1 1 t p [s] z thjc [k/w] fig. 6 typ. transient thermal impedance r i t i 1 0.231 0.0005 2 0.212 0.004 3 0.19 0.02 4 0.267 0.15 ixys reserves the right to change limits, conditions and dimensions. ? 20110808a data according to iec 60747and per diode unless otherwise specified 2011 ixys all rights reserved
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